2
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50
μsec Pulse Width, 2.5% Duty Cycle
RθJC
ZθJC
0.27
0.25
0.04
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
=50mA,VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(3)
(VDS
=10Vdc,ID
= 320
μAdc)
VGS(th)
1
1.6
2.5
Vdc
Gate Quiescent Voltage
(4)
(VDD
=50Vdc,ID
= 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.6
3.5
Vdc
Drain--Source On--Voltage
(3)
(VGS
=10Vdc,ID
=1.58Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(3,5)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.92
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
54.5
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
373
?
pF
Functional Tests
(4)
(In Freescale Broadband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 1400 mA, Pout
= 90 W Avg., f = 860 MHz,
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.5
22.5
24.5
dB
Drain Efficiency
ηD
26
28
?
%
Adjacent Channel Power Ratio
ACPR
?
-- 6 2
-- 5 9
dBc
Input Return Loss
IRL
?
-- 4
-- 2
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
(continued)
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